Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements ...

Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC

Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fa...

Temperature and Stress Simulation of 4H-SiC during Laser-Induced Silicidation for Ohmic Contact Generation

We report here on the simulation of temperature and stress evolution of 4H-SiC during laser-induced silicidation to locally generate ohmic contacts between the semiconductor and nickel metallization. The simulation is based on optical free carrier absorption, thermal conduction, and thermal radiation. Our results show that, during laser irradiation, similar temperatures and correspondingly simi...

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...